Samsung reveals mobile DRAM with Wide I/O interface


Samsung reveals mobile DRAM with Wide I/O interface

Samsung’s memory is about to get faster than ever before as the electronics giant announced advancements in memory technology with the new 1 gigabyte mobile DRAM with wide I/0 interface. The announcement indicates that mobile devices operating on Samsung memory are soon to see an increase in speed. These will be evidenced in tablet pcs and smartphones.

According to an announcement by Samsung, the new DRAMA will transmit data at a rate of 12.8 gigabytes per second. This also increases the DDR DRAMA mobile bandwidth approximately eight times its previous rate.

Senior Vice President of Samsung Electronics Product Planning & Application Engineering Byungse So stated, “Following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products. We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry.”

The I/O DRAM uses 512 pins for data input compared to previous DRAMS that used a mere 32 pins, speeding up data transmissions. The new DRAMA is approximately four times that associated with LPDDR2 DRAM. Samsung hasn’t announced a date they expect the new DRAM to find its way into Samsung mobile applications and tablet pcs. Samsung Electronics is expected to share more information regarding the new I/O DRAM technology at the International Solid State Circuits Conference which will be held in San Francisco from February 20 to February 24, 2011.


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